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A new analytical model of GaAs MESFET's

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Abstract

In this paper, a simple model for the calculation of the current—voltage characteristics of a short channel GaAs MESFET is first proposed. The new model can describe GaAs behavior for both high pinchoff and low pinchoff voltages. Test results show that it is more efficient and simpler than the previous models[1–7].

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Authors and Affiliations

  1. Department of Radio Engineering, South China University of Technology, 510641, GuangZhou, People's Republic of China

    Songxin Qi

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  1. Songxin Qi
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Qi, S. A new analytical model of GaAs MESFET's. Int J Infrared Milli Waves 16, 949–956 (1995). https://doi.org/10.1007/BF02066668

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  • DOI: https://doi.org/10.1007/BF02066668

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