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Hyperfine Interactions

, Volume 17, Issue 1–4, pp 191–196 | Cite as

Muon diffusion and trapping by defects in electron-irradiated Nb and Ta

  • T. Aurenz
  • K. -P. Arnold
  • K. -P. Döring
  • M. Gladisch
  • N. Haas
  • D. Herlach
  • W. Jacobs
  • M. Krause
  • M. Krauth
  • H. Orth
  • H. -E. Schaefer
  • K. Schulze
  • A. Seeger
Trapping and Detrapping at Impurities and Defects

Abstract

The transverse spin relaxation of positive muons (μ+) has been measured on Nb and Ta after irradiation with 3 MeV electrons. In high-purity Nb theμ+ diffusivity derived from the trapping at irradiation-induced defects above 100 K is explained in terms of adiabatic hopping. At lower temperatures there is evidence for the dominating processes to be fewphonon incoherent tunnelling and coherent hopping. Annealing results in the formation of new defects capable of trapping theμ+. In Ta at least two types of irradiation-induced defects capable of trappingμ+ survive up to annealing temperatures of 400 K.

Keywords

Thin Film Spin Relaxation Transverse Spin Positive Muon Muon Diffusion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© J.C. Baltzer AG, Scientific Publishing CompanyJ.C. Baltzer AG, Scientific Publishing Company, and Yamada Science Foundation 1984

Authors and Affiliations

  • T. Aurenz
    • 2
  • K. -P. Arnold
    • 1
  • K. -P. Döring
    • 2
  • M. Gladisch
    • 1
  • N. Haas
    • 3
  • D. Herlach
    • 2
  • W. Jacobs
    • 1
  • M. Krause
    • 1
  • M. Krauth
    • 1
  • H. Orth
    • 1
  • H. -E. Schaefer
    • 2
  • K. Schulze
    • 3
  • A. Seeger
    • 2
    • 3
  1. 1.Physikalisches InstitutUniversität HeidelbergHeidelberg 1
  2. 2.Institut für Theoretische und Angewandte PhysikUniversität StuttgartStuttgart 80
  3. 3.Max-Planck-Institut für MetallforschungStuttgart 80

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