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Relaxation of anomalous muonium in silicon

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Abstract

The relaxation rateλ * of anomalous muonium in silicon with different dopant concentrations was investigated as a function of temperature. Below 140 K, a close correlation betweenλ * and the concentration of conduction electrons was found. We conclude from this behavior that the relaxation of anomalous muonium in this temperature region is caused by the scattering of conduction electrons. A microscopic model is developed and the value of the exchange interactionJ ex is derived.

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References

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Authors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, Postfach 5560, D-7750, Konstanz, W.-Germany

    E. Albert, A. Möslang, E. Recknagel & A. Weidinger

Authors
  1. E. Albert
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  2. A. Möslang
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  3. E. Recknagel
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  4. A. Weidinger
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Additional information

The financial support of the Bundesminister für Forschung und Technologie is gratefully acknowledged.

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Albert, E., Möslang, A., Recknagel, E. et al. Relaxation of anomalous muonium in silicon. Hyperfine Interact 18, 611–614 (1984). https://doi.org/10.1007/BF02064878

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  • DOI: https://doi.org/10.1007/BF02064878

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