Abstract
Low-temperature measurements of muonium parameters in various germanium crystals have been performed. We have measured crystals with different levels of neutral impurities, with and without dislocations, and with different annealing histories. The most striking result is the apparent trapping of Mu by silicon impurities in germanium.
Similar content being viewed by others
References
B.D. Patterson, Hyperfine Interactions 6 (1979) 155
A. Weidinger, G. Balzer, H. Graf, E. Recknagel, and Th. Wichert, Phys. Rev.B24 (1981) 6185
E.E. Haller, B. Joós, and L.M. Falicov, Phys. Rev.B21 (1980) 4729; B. Joós, E.E. Haller and L.M. Falicov, Phys. Rev.B22 (1980) 832
E.E. Haller, G.S. Hubbard, W.L. Hansen, and A. Seeger, Proc. Int. Conf. on Radiation Effects in Semiconductors, Dubrovnik, 1976, ed. N.B. Urli and J.W. Corbett, Inst. Phys. Conf. Series 31 (1977) p. 309
C.W. Clawson, E.E. Haller, K.M. Crowe, S.S. Rosenblum, and J.H. Brewer, Hyperfine Interactions8 (1981) 417
K.-P. Döring, N. Haas, E.E. Haller, D. Herlach, W. Jacobs, M. Krauth, H. Orth, J. Rosenkranz, A. Seeger, J. Vetter, K.-P. Arnold, Th. Aurenz, and H. Bossy, preprint, 1982
E.E. Haller, W.L. Hansen, and F.S. Goulding, Adv. Phys.30 (1981) 93
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Clawson, C.W., Crowe, K.M., Haller, E.E. et al. Effects of electronically neutral impurities on muonium in germanium. Hyperfine Interact 18, 603–604 (1984). https://doi.org/10.1007/BF02064876
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02064876