The electronicg-factor anisotropy determined from measurements near the magic field of anomalous muonium in silicon and germanium
- 14 Downloads
The field dependences of the anomalous muoniumμSR frequencies have been measured in Si and Ge around the “magic field”. The results show a clear electronicg-factor anisotropy exists for Ge withg¦-g1=0.033, while that of Si is much smaller and essentially zero within the experimental accuracy.
KeywordsSilicon Thin Film Anisotropy Germanium Field Dependence
Unable to display preview. Download preview PDF.
- P.F. Meier, C. Boekema, E. Holzschuh, W. Kundig, and B.D. Patterson, Helv. Phys. Acta53 (1980) 227Google Scholar
- C. Boekema, E. Holzschuh, W. Kundig, P.F. Meier, B.D. Patterson, W. Reichart, and K. Rüegg, Hyperfine Interactions8 (1981) 401; E. Holzschuh, W. Kundig, P.F. Meier, B.D. Patterson, J.P.F. Sellschop, M.C. Stemmet, and H. Apel, Phys. Rev.A 25 (1982) 1272Google Scholar
- J.C. Philips, in: Bonds and bands in semiconductors (Academic, New York, 1973)Google Scholar