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Hyperfine Interactions

, Volume 18, Issue 1–4, pp 595–598 | Cite as

The electronicg-factor anisotropy determined from measurements near the magic field of anomalous muonium in silicon and germanium

  • K. W. Blazey
  • T. L. Estle
  • E. Holzschuh
  • P. F. Meier
  • B. D. Patterson
  • M. Richner
Muonium-Like States in Solids

Abstract

The field dependences of the anomalous muoniumμSR frequencies have been measured in Si and Ge around the “magic field”. The results show a clear electronicg-factor anisotropy exists for Ge withg¦-g1=0.033, while that of Si is much smaller and essentially zero within the experimental accuracy.

Keywords

Silicon Thin Film Anisotropy Germanium Field Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    P.F. Meier, C. Boekema, E. Holzschuh, W. Kundig, and B.D. Patterson, Helv. Phys. Acta53 (1980) 227Google Scholar
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    C. Boekema, E. Holzschuh, W. Kundig, P.F. Meier, B.D. Patterson, W. Reichart, and K. Rüegg, Hyperfine Interactions8 (1981) 401; E. Holzschuh, W. Kundig, P.F. Meier, B.D. Patterson, J.P.F. Sellschop, M.C. Stemmet, and H. Apel, Phys. Rev.A 25 (1982) 1272Google Scholar
  3. [3]
    J.C. Philips, in: Bonds and bands in semiconductors (Academic, New York, 1973)Google Scholar

Copyright information

© J.C. Baltzer AG, Scientific Publishing Company, and Yamada Science Foundation 1984

Authors and Affiliations

  • K. W. Blazey
    • 1
  • T. L. Estle
    • 2
  • E. Holzschuh
    • 3
  • P. F. Meier
    • 3
  • B. D. Patterson
    • 3
  • M. Richner
    • 3
  1. 1.IBM Zürich Research LaboratoryRüschlikonSwitzerland
  2. 2.Rice UniversityHoustonUSA
  3. 3.Physik InstitutUniversität ZürichZürichSwitzerland

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