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The effect of radiation defects in silicon single crystal lattice on the characteristic states of the interstitial muonium atom

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Abstract

Radiation defects are shown experimentally to affect differently the normal and anomalous muonium states in silicon. This evidences essentially different mobilities of the two muonium states in the sample lattice.

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Authors and Affiliations

  1. Leningrad Institute for Nuclear Physics, Academy of Sciences of the USSR, USSR

    S. G. Barsov, A. L. Getalov, V. A. Gordeev, V. A. Evseev, R. F. Konopleva, S. P. Kruglov, V. I. Kudinov, L. A. Kuz'min, S. M. Mikirtychants, E. V. Minaichev, G. G. Myasishcheva, Y. V. Obukhov, G. I. Savel'ev, V. G. Firsov & G. V. Shcherbakov

  2. Institute for Theoretical and Experimental Physics, Moscow, USSR

    V. I. Kudinov, E. V. Minaichev, G. G. Myasishcheva, Y. V. Obukhov & G. I. Savel'ev

Authors
  1. S. G. Barsov
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  2. A. L. Getalov
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  3. V. A. Gordeev
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  4. V. A. Evseev
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  5. R. F. Konopleva
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  6. S. P. Kruglov
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  7. V. I. Kudinov
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  8. L. A. Kuz'min
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  9. S. M. Mikirtychants
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  10. E. V. Minaichev
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  11. G. G. Myasishcheva
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  12. Y. V. Obukhov
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  13. G. I. Savel'ev
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  14. V. G. Firsov
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  15. G. V. Shcherbakov
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Barsov, S.G., Getalov, A.L., Gordeev, V.A. et al. The effect of radiation defects in silicon single crystal lattice on the characteristic states of the interstitial muonium atom. Hyperfine Interact 18, 551–555 (1984). https://doi.org/10.1007/BF02064866

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  • DOI: https://doi.org/10.1007/BF02064866

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