Abstract
A chain of arguments is made which draws on the experimental results ofμSR, muon-pion-decay channeling, and3He channeling in deuterium-implanted silicon and which leads to a plausible site for the anomalous muonium atom Mu* in the group-IV semiconductors. I propose that Mu* in silicon occupies the deuterium position approximately 1.6 Å from a Si atom in a [111] anti-bonding direction and that analogous sites are occupied in Ge and diamond. Some possible implications of this site assignment are discussed.
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Patterson, B.D. A site determination for Mu* and its implications. Hyperfine Interact 18, 517–524 (1984). https://doi.org/10.1007/BF02064863
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DOI: https://doi.org/10.1007/BF02064863