Abstract
The adsorption of oxygen on ZnO\(\left( {10\bar 10} \right)\) has been studied by observing the nonohmic characteristics of contacted ZnO\(\left( {10\bar 10} \right)\) crystals. When the sample assembly was evacuated at 773 K, there was a negative peak at the bias of 10 mV in the(I-kV) vs. V plot. When the assembly was exposed to oxygen at 298–573 K, the mean conductivity decreased and a negative peak at the bias of 50–230 mV was found in the(I-kV) vs. V plot. To analyze the experimental results, a simple model was developed assuming the contact to be of two semiconductor surfaces separated by a finite distance. From the experimental results and theoretical suggestions, we estimated the height of surface barrier during oxygen adsorption.
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Han, C.S. I-V Characteristics of ZnO−ZnO contact during oxygen adsorption. React Kinet Catal Lett 57, 247–254 (1996). https://doi.org/10.1007/BF02064739
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DOI: https://doi.org/10.1007/BF02064739