Hyperfine Interactions

, Volume 84, Issue 1, pp 243–248 | Cite as

Impurity effect on the creation of point-defects in GaAs and InP investigated by a slow positron beam

  • L. Wei
  • S. Tanigawa
  • A. Uedono
Article

Abstract

The impurity effect on the creation of point-defects in 60-keV Be+-ion implanted GaAs and InP has been studied by a slow positron beam. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects with pre-existing interstitial defects in p-type GaAs. In the case of InP, the vacancy-type defects were created by ion implantation and increased with the implantation dose. However, no significant doping effect was observed in InP.

Keywords

Thin Film Recombination GaAs Doping Effect Implantation Dose 

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Copyright information

© J.C. Baltzer AG, Science Publishers 1994

Authors and Affiliations

  • L. Wei
    • 1
  • S. Tanigawa
    • 1
  • A. Uedono
    • 1
  1. 1.Institute of Materials ScienceUniversity of TsukubaIbarakiJapan

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