Hyperfine Interactions

, Volume 84, Issue 1, pp 243–248 | Cite as

Impurity effect on the creation of point-defects in GaAs and InP investigated by a slow positron beam

  • L. Wei
  • S. Tanigawa
  • A. Uedono


The impurity effect on the creation of point-defects in 60-keV Be+-ion implanted GaAs and InP has been studied by a slow positron beam. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects with pre-existing interstitial defects in p-type GaAs. In the case of InP, the vacancy-type defects were created by ion implantation and increased with the implantation dose. However, no significant doping effect was observed in InP.


Thin Film Recombination GaAs Doping Effect Implantation Dose 
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Copyright information

© J.C. Baltzer AG, Science Publishers 1994

Authors and Affiliations

  • L. Wei
    • 1
  • S. Tanigawa
    • 1
  • A. Uedono
    • 1
  1. 1.Institute of Materials ScienceUniversity of TsukubaIbarakiJapan

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