Impurity effect on the creation of point-defects in GaAs and InP investigated by a slow positron beam
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The impurity effect on the creation of point-defects in 60-keV Be+-ion implanted GaAs and InP has been studied by a slow positron beam. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects with pre-existing interstitial defects in p-type GaAs. In the case of InP, the vacancy-type defects were created by ion implantation and increased with the implantation dose. However, no significant doping effect was observed in InP.
KeywordsThin Film Recombination GaAs Doping Effect Implantation Dose
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- P.J. Schultz and K.G. Lynn, Rev. Mod. Phys. 60(1988)701, and references therein.Google Scholar
- L. Wei, S. Tanigawa, M. Uematsu and K. Maezawa, Jpn. J. Appl. Phys. 31(1992)2056.Google Scholar
- A. Uedono, L. Wei, C. Dosho, H. Kondo, S. Tanigawa, J. Sugiura and M. Ogasawara, Jpn. J. Appl. Phys. 30(1991)201.Google Scholar
- A. Uedono and S. Tanigawa, Jpn. J. Appl. Phys. 29(1990)L346.Google Scholar
- K. Saarinen, P. Hautojärvi, J. Mäkinen, A. Vehanen, J. Keinonen, E. Rauhara, J. Koponen and C. Corbel, in:Defect Control in Semiconductors, ed. K. Sumino (Elsevier, Amsterdam, 1990) p. 891.Google Scholar
- J.-L. Lee, L. Wei, S. Tanigawa and M. Kawabe, J. Appl. Phys. 69(1990)6364.Google Scholar
- A. Uedono and S. Tanigawa, Jpn. J. Appl. Phys. 29(1990)909.Google Scholar
- H. Ryssel and I. Ruge,Ion Implantation (Wiley, New York, 1986) p. 7.Google Scholar