Abstract
Deuterium and15N were used as activable tracers for the study of the dissolution of hydrogen and nitrogen in silicon. Silicon was heated or zone-melted in D2-Ar, or heated in15N2-Ar after being covered with Si3 25N4. Depth profiles of D or15N in the resultant silicon samples were measured by the D(3He, p)4He or15N(α, n)18F reaction combined with repeated HF−HNO3 etching. These two measurements have proved to be highly reliable and sensitive and to offer useful techniques in the study of trace concentrations of hydrogen and nitrogen in solid matrices.
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Nozaki, T., Itoh, Y. & Qiu, Q. Dissolution of hydrogen and nitrogen in silicon. Journal of Radioanalytical and Nuclear Chemistry, Articles 124, 341–352 (1988). https://doi.org/10.1007/BF02041326
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DOI: https://doi.org/10.1007/BF02041326