Abstract
Preparation of lanthanide fluoride and chloride films has been studied by chemical vapor deposition (CVD) using Ln(thd)3 (Ln=lanthanide(III); thd=2,2,6,6-tetramethyl-3,5-heptanedionato ligand) and Y(thd)3 with gas mixture systems of CF2Cl2 (difluorodichloromethane)/O2 and CF2Cl2/H2. Two kinds of fluorides, LnOF oxyfluoride and LnF3 triffluoride, were obtained separately along a CVD tube at atmospheric pressure and temperature as low as 300–600°C by the reaction of Ln(thd)3 chelates with CF2Cl2/O2 gas system. The chemical characteristics of the CVD products were considered from the thermochemical point of view.
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Amano, R., Shiokawa, Y., Sato, N. et al. Chemical vapor deposition using lanthanide β-diketone chelates with difluorodichloromethane. Journal of Radioanalytical and Nuclear Chemistry, Articles 172, 81–86 (1993). https://doi.org/10.1007/BF02040664
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DOI: https://doi.org/10.1007/BF02040664