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Chemical vapor deposition using lanthanide β-diketone chelates with difluorodichloromethane

  • R. Amano
  • Y. Shiokawa
  • N. Sato
  • Y. Suzuki
Article

Abstract

Preparation of lanthanide fluoride and chloride films has been studied by chemical vapor deposition (CVD) using Ln(thd)3 (Ln=lanthanide(III); thd=2,2,6,6-tetramethyl-3,5-heptanedionato ligand) and Y(thd)3 with gas mixture systems of CF2Cl2 (difluorodichloromethane)/O2 and CF2Cl2/H2. Two kinds of fluorides, LnOF oxyfluoride and LnF3 triffluoride, were obtained separately along a CVD tube at atmospheric pressure and temperature as low as 300–600°C by the reaction of Ln(thd)3 chelates with CF2Cl2/O2 gas system. The chemical characteristics of the CVD products were considered from the thermochemical point of view.

Keywords

Chloride Physical Chemistry Inorganic Chemistry Fluoride Chemical Vapor Deposition 
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Copyright information

© Akadémiai Kiadó 1993

Authors and Affiliations

  • R. Amano
    • 1
  • Y. Shiokawa
    • 2
  • N. Sato
    • 3
  • Y. Suzuki
    • 2
  1. 1.School of Allied Medical ProfessionsKanazawa UniversityKodatsuno, Kanazawa(Japan)
  2. 2.The Oarai Branch, Institute of Materials ResearchTohoku UniversityOarai, Ibaraki(Japan)
  3. 3.Institute for Advanced Materials ProcessingTohoku UniversitySendai(Japan)

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