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Thermal neutron irradiation induced defects in n-GaAs and their annihilation by annealing processes

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Abstract

Forperforming radiochemical photocorrosion measurements, n-GaAs samples were irradiated with thermal neutrons. The resulting changes in charge carrier concentration and mobility are determined by far IR reflectance measurements. A great part of the neutron irradiation induced defects could be annihilated by annealing at temperatures of up to 650°C. The neutron irradiation induced defects are responsible for essential changes in photoelectrochemical characteristics of n-GaAs electrodes in aqueous electrolytes. The photocurrent onset potential is shifted in positive direction and the maximum photocurrent is decreased. After annealing treatment the original photoelectrochemical behavior is restored.

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Kraft, A., Heckner, K.H. Thermal neutron irradiation induced defects in n-GaAs and their annihilation by annealing processes. Journal of Radioanalytical and Nuclear Chemistry, Articles 174, 167–175 (1993). https://doi.org/10.1007/BF02040344

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  • DOI: https://doi.org/10.1007/BF02040344

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