Abstract
Neutron activation analysis was used for the determination of 29 trace impurities is high-purity semiconductor grade Ge and Si. In order to determine very low contents of uranium and thorium,239Np and233Pa activation products were separated using anion exchange and LaF3 coprecipitation methods. The impurity contents were found to be very low, and therefore their adverse effects would be negligible.
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Zaidi, J.H., Qureshi, I.H., Arif, M. et al. Measurement of trace impurities in high purity materials. Journal of Radioanalytical and Nuclear Chemistry Articles 191, 75–82 (1995). https://doi.org/10.1007/BF02035986
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DOI: https://doi.org/10.1007/BF02035986