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Recent progress in the study of semiconductors using charged particle activation

  • M. A. Misdaq
  • G. Blondiaux
  • N. Bordes
  • A. Giovagnoli
  • M. Valladon
  • L. C. Wei
  • M. Hage Ali
  • C. J. Maggiore
  • J. L. Debrun
Article

Abstract

Several examples of improvements or of new developments in the field of charged particle activation analysis applied to the study of semiconductors are described: determination of carbon at the sub-ppb level in GaAs, use of 20 to 30 MeV protons for trace analysis in InP, study of radioactivation with 12 MeV tritons, and use of channeling to study the lattice location of carbon atoms at trace level in GaAlAs.

Keywords

Physical Chemistry Inorganic Chemistry GaAs Carbon Atom Charged Particle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Akadémiai Kiadó 1987

Authors and Affiliations

  • M. A. Misdaq
    • 1
  • G. Blondiaux
    • 1
  • N. Bordes
    • 1
  • A. Giovagnoli
    • 1
  • M. Valladon
    • 1
  • L. C. Wei
    • 1
  • M. Hage Ali
    • 1
  • C. J. Maggiore
    • 1
  • J. L. Debrun
    • 1
  1. 1.Groupe “Activation des Réactions Nucléaires à l'Analyse Chimique” Service du CyclotronCNRSOrleans(France)

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