Czechoslovak Journal of Physics B

, Volume 18, Issue 7, pp 897–899 | Cite as

Electrical properties of n-type CdSe single crystals prepared under a nitrogen pressure

  • P. Höschl
  • S. Kubálková


Single crystals of n-type CdSe were prepared from the melt at a pressure of about 100 atmospheres of nitrogen. The results ofϱ andRH measurements as a function of temperature are presented for the region of 160–1500°K. The activation energy of the donors and the width of the forbidden band as determined from the temperature dependence areɛD=(0.15±0.02) eV andEg=(1.88±0.03) eV respectively. For comparison the results of measurements carried out on crystals prepared in a vacuum are also mentioned.


Nitrogen Atmosphere Activation Energy Electrical Property Nitrogen Pressure 
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Copyright information

© Academia, Nakladatelství Československé akademie 1968

Authors and Affiliations

  • P. Höschl
    • 1
  • S. Kubálková
    • 1
  1. 1.Faculty of Mathematics and PhysicsCharles University, PraguePraha 2Czechoslovakia

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