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Czechoslovak Journal of Physics B

, Volume 18, Issue 7, pp 897–899 | Cite as

Electrical properties of n-type CdSe single crystals prepared under a nitrogen pressure

  • P. Höschl
  • S. Kubálková
Article

Abstract

Single crystals of n-type CdSe were prepared from the melt at a pressure of about 100 atmospheres of nitrogen. The results ofϱ andRH measurements as a function of temperature are presented for the region of 160–1500°K. The activation energy of the donors and the width of the forbidden band as determined from the temperature dependence areɛD=(0.15±0.02) eV andEg=(1.88±0.03) eV respectively. For comparison the results of measurements carried out on crystals prepared in a vacuum are also mentioned.

Keywords

Nitrogen Atmosphere Activation Energy Electrical Property Nitrogen Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Höschl P.: Čs. čas. fys. (to be published).Google Scholar
  2. [2]
    Libický A.: Proceedings of an International Conference on II–VI Semiconducting Compounds, Providence (1967), (in press).Google Scholar
  3. [3]
    Höschl P., Koňák Č.: Phys. Stat. Sol.9 (1965), 167.Google Scholar
  4. [4]
    Höschl P.: Thesis, Charles University, Prague (1966).Google Scholar
  5. [5]
    Burmeister D.: PhD Thesis, Stanford University (1965).Google Scholar
  6. [6]
    Di Domenico M., Anderson I. K.: Proc. IEEE52 (1964), 815.Google Scholar
  7. [7]
    Böer K. W., Boyn R., Geode O.: Phys. Stat. Sol.3 (1963), 1684.Google Scholar

Copyright information

© Academia, Nakladatelství Československé akademie 1968

Authors and Affiliations

  • P. Höschl
    • 1
  • S. Kubálková
    • 1
  1. 1.Faculty of Mathematics and PhysicsCharles University, PraguePraha 2Czechoslovakia

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