Czechoslovak Journal of Physics B

, Volume 18, Issue 7, pp 897–899 | Cite as

Electrical properties of n-type CdSe single crystals prepared under a nitrogen pressure

  • P. Höschl
  • S. Kubálková
Article

Abstract

Single crystals of n-type CdSe were prepared from the melt at a pressure of about 100 atmospheres of nitrogen. The results ofϱ andRH measurements as a function of temperature are presented for the region of 160–1500°K. The activation energy of the donors and the width of the forbidden band as determined from the temperature dependence areɛD=(0.15±0.02) eV andEg=(1.88±0.03) eV respectively. For comparison the results of measurements carried out on crystals prepared in a vacuum are also mentioned.

Keywords

Nitrogen Atmosphere Activation Energy Electrical Property Nitrogen Pressure 

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References

  1. [1]
    Höschl P.: Čs. čas. fys. (to be published).Google Scholar
  2. [2]
    Libický A.: Proceedings of an International Conference on II–VI Semiconducting Compounds, Providence (1967), (in press).Google Scholar
  3. [3]
    Höschl P., Koňák Č.: Phys. Stat. Sol.9 (1965), 167.Google Scholar
  4. [4]
    Höschl P.: Thesis, Charles University, Prague (1966).Google Scholar
  5. [5]
    Burmeister D.: PhD Thesis, Stanford University (1965).Google Scholar
  6. [6]
    Di Domenico M., Anderson I. K.: Proc. IEEE52 (1964), 815.Google Scholar
  7. [7]
    Böer K. W., Boyn R., Geode O.: Phys. Stat. Sol.3 (1963), 1684.Google Scholar

Copyright information

© Academia, Nakladatelství Československé akademie 1968

Authors and Affiliations

  • P. Höschl
    • 1
  • S. Kubálková
    • 1
  1. 1.Faculty of Mathematics and PhysicsCharles University, PraguePraha 2Czechoslovakia

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