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Analysis of the effect of the temperature variation on transistor parameters and gain

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Abstract

The variations of the hybridh-parameters and the gain of the transistor with temperature have been studied by obtaining an analytical expression. The values of theh-parameters are calculated in the entire temperature range 213–473 K with the help of the expression obtained and the calculated values are in good agreement with the experimental data. The gain of the transistor extracted from the obtained values of the parameters is seen to be in excellent agreement with the experimental values.

Résumé

On a étudié, à l'aide d'une expression analytique obtenue pour le but poursuivi, la variation des paramètresh hybrides et l'amplification du transistor avec la température. On a calculé, à l'aide de cette expression, les paramètresh dans tout l'intervalle des températures comprises entre 213 et 473 K. Les valeurs calculées sont en bon accord avec les données d'expériences. L'amplification du transistor, calculée à partir des valeurs obtenues, est en excellent accord avec les valeurs d'expériences.

Zusammenfassung

Die Änderung des Hybrid-Parameters und die Verstärkung des Transistors mit der Temperatur wurden untersucht, indem ein analytischer Ausdruck hierfür erhalten worden ist. Die Werte derh-Parameter wurden im ganzen Temperaturbereich von 213 bis 473 K mit Hilfe des erhaltenen Ausdrucks berechnet und die berechneten Angaben sind in guter Übereinstimmung mit den Versuchsergebnissen. Die aus den erhaltenen Parameterwerten errechnete Transistorverstärkung stimmt mit den Versuchswerten sehr gut überein.

Резюме

Было изучено изменен ие с температурой смешанныхh-параметро в и усиления транзистора с помощь ю полученного для них аналитического выра жения. Значенияhпара метров были вычислены во все й температурной обла сти 213–473 К на основе полученного выражения и эти значе ния хорошо согласуют ся с экспериментальными данными. Усиление транзистор а, выделенное из получ енных значений параметров, кажется, должно быть в хорошем соглас ии с экспериментальн ыми значениями.

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References

  1. W. W. Gartner, Transistor, Principles, Design and Applications, D. Van Nostrand Company, Inc. New York 1960, p. 30.

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  2. R. L. Pritchard, Electrical Characteristics of Transistors, McGraw-Hill Book Company, New York 1967, p. 585.

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  3. F. Fitchen, Transistor Circuit Analysis and Design, D. Van Nostrand Company, Inc., New York 1966, p. 102.

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  4. F. K.Manasse, J. A.Ekiss and C. R.Gray, Modern Transistor Electronics Analysis and Design, Prentice-Hall Inc., Englewood Cliffs, N. J., p. 84.

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Additional information

Ex-student (M.Sc.) of Department of Physica, R.E.C. Waranga-506004, India.

The work was done in the Department of Physica, R.E.C. Warangal-506004, India.

The authors wish to express their thanks to Dr. V. V. Rao and Dr. G. S. Verma for their interest in the present project. One of us (K.S.D.) is also grateful to Dr. R. A. Rashid and Dr. R. H. Misho.

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Dubey, K.S., Subbarao, M.V. Analysis of the effect of the temperature variation on transistor parameters and gain. Journal of Thermal Analysis 17, 343–349 (1979). https://doi.org/10.1007/BF01914025

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  • DOI: https://doi.org/10.1007/BF01914025

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