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Certain properties of controllable heterojunction structures

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Conclusions

We synthesized Si-SnO2 heterojunctions in planar structures, whose geometry was chosen to allow modulation of the conductivity and capacitance of one of the heterojunctions by changing the state of another controlling heterojunction.

Analysis of the current-voltage characteristics shows that the current of a reverse-biased Si-SnO2 heterojunction can be controlled by changing the free-carrier concentration in the conduction band of the SnO2 film within the effective range of this heterojunction.

Analysis of the voltage-capacitance characteristics shows that the capacitance of one heterojunction can be controlled by changing the current through another, nearby heterojunction, through a redistribution of charge carriers near the controlled heterojunction.

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Literature cited

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Authors and Affiliations

  1. Voronezh State University, USSR

    V. V. Kryachko, É. A. Lebedev, V. V. Golovina & V. F. Synorov

Authors
  1. V. V. Kryachko
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  2. É. A. Lebedev
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  3. V. V. Golovina
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  4. V. F. Synorov
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Additional information

Translated from Izvestiya VUZ. Fizika, No. 7, pp. 124–125, July, 1970.

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Kryachko, V.V., Lebedev, É.A., Golovina, V.V. et al. Certain properties of controllable heterojunction structures. Soviet Physics Journal 13, 945–946 (1970). https://doi.org/10.1007/BF01879852

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  • DOI: https://doi.org/10.1007/BF01879852

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