References
J. A. LONG, V. G. RIGGS and W. D. JOHNSTON Jr,J. Crystal Growth 69 (1984) 10.
A. T. MACRANDER, J. A. LONG, V. G. RIGGS, A. F. BLOEMEKE and W. D. JOHNSTON,Appl. Phys. Lett. 45 (1984) 1297.
K. HUANG and B. W. WESSELS,J. Appl. Phys. 60 (1986) 4342.
B. CLERJAUD,J. Phys. C. 18 (1985) 3615.
E. W. WILLIAMS, W. ELDER, M. G. ASTLES, M. WEBB, J. B. MULLIN, B. STRAUGHAN and P. J. TUFTON,J. Electrochem Soc. 12 (1973) 1741.
M. S. SKOLNICK, E. J. FOULKES and B. TUCK,J. Appl. Phys. 55 (1984) 2951.
R. E. NAHORY, A. A. BALLMAN, H. BROWN and M. R. WILSON,Inst. Phys. Conf. Ser. 65 (1983) 7.
L. EAVES, A. W. SMITH, M. S. SKOLNICK and B. COCKAYNE,J. Appl. Phys. 53 (1982) 4955.
Y. DAWEI, B. C. CAVENETT and M. S. SKOLNICK,J. Phys. C. 16 (1983) L647.
S. B. PHATAK, S. M. BEDAIR and S. FUJITU,Solid State Electron. 23 (1980) 839.
S. FUJITA, M. KUZUHARA, M. YAGYU and A. SASAKI,ibid. 25 (1982) 359.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Huang, K., Wessels, B.W. Epitaxial growth of manganese-doped indium phosphide. J Mater Sci Lett 6, 1310–1312 (1987). https://doi.org/10.1007/BF01794600
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01794600