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Mixing of phosphorus and antimony ions in silicon by recoil implantation

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Department of Electronics, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong

    H. L. Kwok, Y. W. Lam, S. P. Wong & M. C. Poon

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  1. H. L. Kwok
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  2. Y. W. Lam
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  3. S. P. Wong
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  4. M. C. Poon
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Kwok, H.L., Lam, Y.W., Wong, S.P. et al. Mixing of phosphorus and antimony ions in silicon by recoil implantation. J Mater Sci Lett 5, 633–634 (1986). https://doi.org/10.1007/BF01731532

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  • DOI: https://doi.org/10.1007/BF01731532

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