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Gallium-doping effects on the molecular beam epitaxial ZnS on GaAs

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Electronic Technical Division, Nippon Seiki Co. Ltd, 2-2-34, Higashi-zao, 940, Nagaoka, Niigata, Japan

    Shin-Ichi Ohta, Ko-Ichi Kashiro & Meiso Yokoyama

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  1. Shin-Ichi Ohta
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  2. Ko-Ichi Kashiro
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  3. Meiso Yokoyama
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Ohta, SI., Kashiro, KI. & Yokoyama, M. Gallium-doping effects on the molecular beam epitaxial ZnS on GaAs. J Mater Sci Lett 7, 506–508 (1988). https://doi.org/10.1007/BF01730707

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  • DOI: https://doi.org/10.1007/BF01730707

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