References
Y. MIZUSHIMA, Y. IGARASHI and O. OCHI,Proc. IEEE 53 (1965) 322.
Idem, ibid. 53 (1965) 509.
A. YAMASHITA, T. TUZAKI, T. YAMADA and I. YAMAUCHI,J. Appl. Phys. 38 (1967) 2359.
K. TAKAHASHI,Vac. Sci. Technol. 9 (1971) 502.
K. TAKAHASHI, T. MORRIZUMI and Y. NAGASHIMA,J. Appl. Phys. 42 (1971) 3009.
P. VOHL, D. H. PERKINS, S. G. ELLIS, R. R. ADDISS, W. HUI and G. NOEL,IEEE Trans. Elect. Devices ED-14 (1967) 26.
J. T. EDMOND,Proc. Phys. Soc. 73 (1959) 622.
H. AOKI,Jpn J. Appl. Phys. 6 (1967) 1248.
F. V. WILLIAMS,J. Electrochem. Soc. 112 (1965) 876.
D. M. MOSHER and R. J. SOUKUP,Thin Solid Films 98 (1982) 215.
M. R. FARUKHI and E. J. CHARLSON,J. Appl. Phys. 40 (1969) 5361.
M. N. ISLAM and S. K. MITRA,J. Mater. Sci. 21 (1986) 2863.
L. J. van der PAUW,Philips Res. Rep. 13 (1958) 1.
S. TOLANSKY, “Multiple beam interferometry of surfaces and films” (Oxford University Press, London, 1948) p. 147.
W. G. SPITZER and J. M. WHELAN,Phys. Rev. 114 (1959) 59.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Islam, M.N., Mitra, S.K. Electrical properties of tellurium-doped gallium arsenide thin films. J Mater Sci Lett 6, 151–153 (1987). https://doi.org/10.1007/BF01728968
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01728968