Abstract
The charge pumping current results from recombination associated with the SiO2-Si interface traps under the gate of a MISFET when a voltage pulse is applied to the gate. The modified Kaw's model is proposed which predicts this current as a function of frequency, amplitude and average voltage of pulses with peak-to-peak amplitudes larger than the difference between the flatband and inversion voltages and with pulse transitions fast enough so that negligible capture or emission occurs during the transition. The presented modification of Kaw's model of the charge pumping effect enables to compute the dependences of the charge pumping current for various types of MIS transistors with different dimensions manufactured by different technologies.
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Orgoň, M., Breza, J., Partyk, B. et al. The modified Kaw's model based on rectangular voltage pulses for the calculation of the charge pumping current in mis transistors. Czech J Phys 44, 771–783 (1994). https://doi.org/10.1007/BF01700644
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DOI: https://doi.org/10.1007/BF01700644