Abstract
The present paper discusses some experimental results obtained on volume specimens of an amorphous semiconductor displaying the switching and memory effects under hydrostatic pressure ranging up to 5 kbar. It is shown that the change in the activation energy is the probable cause of the variation of the VA-characteristics with pressure.
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In conclusion, I wish to express appreciation to Doc. J. Krempaský, CSc, for the subject of the study and many valuable comments during the work and to Ing. J. Doupovec for making available the samples to me.
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Zámečník, J. Effect of hydrostatic pressure on VA-characteristics of amorphous semiconductors Ge15Te81S2As2 . Czech J Phys 21, 1302–1305 (1971). https://doi.org/10.1007/BF01699493
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DOI: https://doi.org/10.1007/BF01699493