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Structure and electrical properties of InSb thin films prepared by plasmatic sputtering

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Czechoslovak Journal of Physics B Aims and scope

Abstract

This paper describes the apparatus for the plasmatic sputtering and preparation of InSb thin films. The structure and the dependence of the resistance of InSb films on the sputtering time at different temperatures are introduced. The dependences of the Hall constant, Hall mobility and electric conductivity of polycrystalline thin films on the film thickness is explained.

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Acad. Sci., Bratislava, Dúbravská cesta, Bratislava, Czechoslovakia

    J. Červenák, A. Živčáková & J. Buch

Authors
  1. J. Červenák
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  2. A. Živčáková
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  3. J. Buch
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Červenák, J., Živčáková, A. & Buch, J. Structure and electrical properties of InSb thin films prepared by plasmatic sputtering. Czech J Phys 20, 84–93 (1970). https://doi.org/10.1007/BF01698110

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  • DOI: https://doi.org/10.1007/BF01698110

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