Abstract
The introduction contains a brief survey of the experimentally found properties of SiO2 layers according to available sources of literature. The paper then deals with the procedure for determining the magnitude and number of imperfections in SiO2 layers on the basis of measurements of the magnitude of the break-down voltage.
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In conclusion, the author would like to thank S. Koc, C.Sc. and Ing. A. černý for valuable remarks on the manuscript, Ing. F. Hejsek for computing the coefficients of the approximate polynomial and E. Vocílková for aid in carrying out the experiments.
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Beneš, O. The properties of SiO2 layers produced by the thermal oxidation of silicon. Czech J Phys 16, 590–601 (1966). https://doi.org/10.1007/BF01695156
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DOI: https://doi.org/10.1007/BF01695156