Abstract
The functional dependence on pseudopotential form factors of the Penn gap related to theE 2 reflectivity peak is used to calculate the pressure dependence ofE 2 and of the static electronic dielectric constant in III–V semiconductors. In a one-parameter approximation only the pressure coefficient of one Fourier coefficient of the pseudopotential is fitted to experimental values of the pressure dependence ofE 2 in group-IV semiconductors and then taken over to III–V compounds. We find a decrease of the dielectric constant with pressure. The comparison of our results with those experimentally known supports strongly our method.
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This work was performed in the Arbeitsgemeinschaft ‘AIII-B v -Halbleiter’ of the Karl-Marx-Universität Leipzig.
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Hübner, K., Schulze, K.R. The pressure dependence of theE 2 reflectivity peak and of the dielectric constant in III–V semiconductors. Czech J Phys 22, 841–846 (1972). https://doi.org/10.1007/BF01694862
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DOI: https://doi.org/10.1007/BF01694862