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Effect of Ti pretreatment on photoelectric properties of TiO2 layers prepared by plasma-anodic oxidation

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Abstract

Photoactive TiO2 layers were formed by anodic oxidation of Ti in O2 RF plasma under various conditions and Ti surface pretreatment. The photocurrent spectrum in 1M NaOH was used to calculate the quantum efficiency of the photocurrent production and the band-gap energy for indirect transitions. Photoelectrochemical properties of TiO2 layers were studied on the decomposition of p-cresol water solution. The method of Ti surface pretreatment (mechanical polishing or chemical etching) has a decisive influence on the photoelectrochemical properties and the structure of the polycrystalline oxide, rutile, anatase or amorphous phase content.

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Authors and Affiliations

  1. Faculty of Chemical Technology, Slovak Technical University, Radlinského 9, 812 37, Bratislava, Slovakia

    Milan Mikula, Jozef Blecha, Michal Čeppan & Ján Panák

Authors
  1. Milan Mikula
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  2. Jozef Blecha
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  3. Michal Čeppan
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  4. Ján Panák
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Additional information

This study was supported by the Grant Agency for Sciences of Slovakia.

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Mikula, M., Blecha, J., Čeppan, M. et al. Effect of Ti pretreatment on photoelectric properties of TiO2 layers prepared by plasma-anodic oxidation. Czech J Phys 45, 1125–1133 (1995). https://doi.org/10.1007/BF01692004

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  • DOI: https://doi.org/10.1007/BF01692004

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