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The interpretation of the temperature dependence of theR H , μ H , σ transport parameters of fine-crystalline InSb films

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The experimental curvesR H , μ H ,σ=f(1/T), obtained from measurements performed with fine-crystalline semiconducting InSb films, are interpreted. A model is taken into account where a barrier mechanism of the electrical conductivity is accepted. Qualitative agreement is obtained between experimental data and the theoretical relations resulting from this model. It is shown that the Hall mobility of the carriers can be described by the relationμ H =μ H0 exp (-Φ b /(κT). The electrical conductivity and the Hall constant can be described by exponential functions with activational energies different from the ones corresponding to the single-crystalline semiconductor.

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Haburská 7, Bratislava, Czechoslovakia

    J. Červenák

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  1. J. Červenák
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Červenák, J. The interpretation of the temperature dependence of theR H , μ H , σ transport parameters of fine-crystalline InSb films. Czech J Phys 18, 1449–1455 (1968). https://doi.org/10.1007/BF01691360

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  • DOI: https://doi.org/10.1007/BF01691360

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