Abstract
The emf which is produced on illuminating a homogeneous semiconductor located in a non-homogeneous magnetic field is calculated. It is shown that this emf is composed of two parts — bulk and boundary. Further, there are given the results of experiments carried out on indium antimonide by means of which the conclusions of the theory were verified.
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Tauc, J. Photo-magnetic phenomenon in a semi-conductor in a non-homogeneous magnetic field. Czech J Phys 6, 421–431 (1956). https://doi.org/10.1007/BF01690341
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DOI: https://doi.org/10.1007/BF01690341