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Dependence of ultrasonic attenuation in semi-conductors on electric field strength

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Cechoslovackij fiziceskij zurnal B Aims and scope

Abstract

The dependence of the ultrasonic attenuation, or amplification, in semi-conductors on the electric field strength is derived. It is shown that the ultrasonic amplification does not increase linearly with the field, but, after reaching a maximum, it again decreases.

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Authors and Affiliations

  1. Transport College, Marxa-Engelsa 25, Žilina

    L'. Hrivnák

  2. Institute of Physics, Slovak Acad. Sci., Dúbravská cesta, Bratislava

    M. Ožvold

Authors
  1. L'. Hrivnák
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  2. M. Ožvold
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Hrivnák, L., Ožvold, M. Dependence of ultrasonic attenuation in semi-conductors on electric field strength. Czech J Phys 15, 251–256 (1965). https://doi.org/10.1007/BF01689691

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  • DOI: https://doi.org/10.1007/BF01689691

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