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Spontaneous ionization of bound exciton complexes

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Cechoslovackij fiziceskij zurnal B Aims and scope

Abstract

Within the framework of the effective mass method a formula for the computation of the probability of the following non-radiative transition in a semiconductor- or insulator crystal was deduced: two holes and one electron or two electrons and one hole are trapped on a crystal lattice defect, one electron recombines with one hole and the energy released thereby is taken up by the remaining quasiparticle which is thus set free and a free carier is formed. The deduced formula is applied to a Cu2O-crystal with a copper-ion vacancy as the crystal lattice defect.

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Authors and Affiliations

  1. Institute of Physics, Czechosl. Acad. Sci., Prague, Lumumbova 1, Praha 8

    Z. Khás

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  1. Z. Khás
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Additional information

The author wishes to express his gratitute to Dr. M. Trlifaj for pointing out this interesting problem and for his valuable comments.

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Khás, Z. Spontaneous ionization of bound exciton complexes. Czech J Phys 15, 568–580 (1965). https://doi.org/10.1007/BF01688067

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  • DOI: https://doi.org/10.1007/BF01688067

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