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Theory of absorption and refraction of direct-gap semiconductors with arbitrary free-carrier concentrations

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Zeitschrift für Physik B Condensed Matter

Abstract

The complex optical dielectric function of highly excited semiconductors is determined very accurately from the excitonic to the quasi-metallic limit, by solving the Bethe-Salpeter equation in the statically screened ladder approximation by matrix inversion. The resulting spectra show especially the changes which occur around the Mott-transition.

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Authors and Affiliations

  1. Institut für Theoretische Physik der Universität, Robert-Mayer-Strasse 8-10, D-6000, Frankfurt-Main, Germany

    S. Schmitt-Rink, J. Löwenau & H. Haug

Authors
  1. S. Schmitt-Rink
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  2. J. Löwenau
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  3. H. Haug
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Project of the Sonderforschungsbereich Frankfurt/Darmstadt, financed by special funds of the Deutsche Forschungsgemeinschaft

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Schmitt-Rink, S., Löwenau, J. & Haug, H. Theory of absorption and refraction of direct-gap semiconductors with arbitrary free-carrier concentrations. Z. Physik B - Condensed Matter 47, 13–17 (1982). https://doi.org/10.1007/BF01686177

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  • DOI: https://doi.org/10.1007/BF01686177

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