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A study of the contrast on growth striations in silicon by X-ray double crystal topography in the Laue case

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The image of growth striations in Si formed by the double crystal X-ray topography in the Laue case (DCTL) is investigated. The results of the dynamical diffraction theory for crystals with small microdefects have been compared with the contrast behaviour determined experimentally. It has been found that the theory explains qualitatively the contrast on the striations and it has been demonstrated that the DCTL method is suitable for detection of the presence of small microdefects in growth striations. Since the paper completes a series of papers on X-ray topography of growth striations, some general conclusions are formulated concerning the applicability of the X-ray topographical methods to the investigation of the structure of the growth striations

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Authors and Affiliations

  1. Department of Solid State Physics, J. E. Purkyně University, Kotlářská 2, Brno, Czechoslovakia

    J. Kuběna & V. Holý

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  1. J. Kuběna
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  2. V. Holý
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Kuběna, J., Holý, V. A study of the contrast on growth striations in silicon by X-ray double crystal topography in the Laue case. Czech J Phys 35, 1007–1016 (1985). https://doi.org/10.1007/BF01676362

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  • DOI: https://doi.org/10.1007/BF01676362

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