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Structural properties of doped n-type amorphous (GeSe3.5)100−x Bi x

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Journal of Materials Science Letters

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References

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Authors and Affiliations

  1. Physics Department, Maharshi Dayanand University, 123001, Rohtak, India

    K. L. Bhatia & D. P. Gosain

  2. Instrumentation and Services Unit, Indian Institute of Science, 560012, Bangalore, India

    G. Parthasarasthy & E. S. T. Gopal

  3. Physics Department, University College, 124001, Rohtak, India

    A. K. Sharma

Authors
  1. K. L. Bhatia
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  2. D. P. Gosain
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  3. G. Parthasarasthy
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  4. E. S. T. Gopal
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  5. A. K. Sharma
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Bhatia, K.L., Gosain, D.P., Parthasarasthy, G. et al. Structural properties of doped n-type amorphous (GeSe3.5)100−x Bi x . J Mater Sci Lett 5, 181–182 (1986). https://doi.org/10.1007/BF01672042

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  • DOI: https://doi.org/10.1007/BF01672042

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