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Noise and instability of germanium alloy transistors

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Soviet Physics Journal Aims and scope

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References

  1. S. R. Ledenhandler and L. I. Giacoletto, Proc. IRE,43, no. 4, pp. 477, 1965.

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  2. N. M. Roizin, Electronics, Semiconductor Devices Series [in Russian], no. 2, 1961.

  3. Yu. S. Karpov, Izv. Leningrad Elektrotekh. Inst., no. 51, 32, 1963.

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  4. M. I. Shchevelev, D. P. Fedorov, and V. I. Kuznetsov, Surface and Contact Phenomena in Semiconductors [in Russian], p. 185, Tomsk, 1964.

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Authors and Affiliations

  1. Voronezh Polytechnical Institute, USSR

    I. I. Boldyrev, V. I. Kuznetsov & M. I. Shchevelev

Authors
  1. I. I. Boldyrev
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  2. V. I. Kuznetsov
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  3. M. I. Shchevelev
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Boldyrev, I.I., Kuznetsov, V.I. & Shchevelev, M.I. Noise and instability of germanium alloy transistors. Soviet Physics Journal 10, 90–92 (1967). https://doi.org/10.1007/BF01649495

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  • DOI: https://doi.org/10.1007/BF01649495

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