Abstract
Anisotropic etching of submicron structures is possible in an apparatus for reactive ion etching. Etch rates of Si, GaAs, SiO2 and Si4N4 have been measured as a function of pressure and rf power in freons 23 and 116. Etch rate of a Microposit 1350 H positive photoresist and selfbias of a cathode have been measured, too. On the basis of obtained results we have considered possibility of the selective etching of different materials used in technology of semiconductor devices.
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Novotný, Z. Reactive ion etching of dielectric and semiconductor layers in CHF3 and C2F6 . Czech J Phys 38, 689–695 (1988). https://doi.org/10.1007/BF01605972
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DOI: https://doi.org/10.1007/BF01605972