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Zum Stromrauschen von Halbleitern

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Summary

The wellknown trapping of electrons and holes seems to give an explanation of the current noise in semiconductors. It is pointed out how especially the magnitude and low frequency dependence of the noise power can be understood; the possibility of a strong correlation between low frequency noise and photoconductive properties of semiconductors is emphasized.

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References

  1. A. van der Ziel, Physica16, 359 (1950).K. W. Boer, Ann. Phys., 6. Folge,14, 87 (1954).D. K. C. McDonald, Rep. Prog. Phys.12, 56 (1949).

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  2. J. H. Gisolf, Physica15, 825 (1949).

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Authors and Affiliations

  1. Abteilung für industrielle Forschung des Instituts für technische Physik der ETH, Zürich

    Willy Baumgartner & Hans Ulrich Thoma

Authors
  1. Willy Baumgartner
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  2. Hans Ulrich Thoma
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Baumgartner, W., Thoma, H.U. Zum Stromrauschen von Halbleitern. Journal of Applied Mathematics and Physics (ZAMP) 6, 66–68 (1955). https://doi.org/10.1007/BF01600735

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  • DOI: https://doi.org/10.1007/BF01600735

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