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Influence of alloy composition on the dependence of the diffusivity-mobility ratio in ternary semiconductors on a quantizing magnetic field

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Czechoslovak Journal of Physics B Aims and scope

Abstract

An expression is derived for the diffusivity-mobility ratio in degenerate narrow-gap ternary semiconductors in the presence of a quantizing magnetic field. With the help of this expression, the diffusivity-mobility ratio is shown, taking n-Hg1−xCdxTe as an example, to have an oscillatory dependence on a quantizing magnetic field. The influence of alloy composition on such dependence is also investigated.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University College of Science & Technology, 92,Acharya P. C. Road, 700 009, Calcutta, India

    A. N. Chakravarti, A. K. Chowdhury, S. Ghosh, K. P. Ghatak & A. Dhar

  2. Department of Physics, University of Patna, Patna, India

    A. K. Chowdhury

Authors
  1. A. N. Chakravarti
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  2. A. K. Chowdhury
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  3. S. Ghosh
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  4. K. P. Ghatak
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  5. A. Dhar
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Chakravarti, A.N., Chowdhury, A.K., Ghosh, S. et al. Influence of alloy composition on the dependence of the diffusivity-mobility ratio in ternary semiconductors on a quantizing magnetic field. Czech J Phys 31, 1037–1042 (1981). https://doi.org/10.1007/BF01598467

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  • DOI: https://doi.org/10.1007/BF01598467

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