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Intrinsic carrier concentration in Hg1−xCdxTe

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Czechoslovak Journal of Physics Aims and scope

Abstract

The effective mass of heavy holes has been determined on the basis of simultaneous analysis of the Hall coefficient and conductivity data obtained in the temperature region 100–300 K on well characterized p-type Hg1−x CdxTe (x≈0·2) samples. Its value is ≈0·7m0. The calculation of intrinsic carrier concentration for 0·19≦ x≦0·3 and 50 Kg ≦T≦ 300 K has been carried out using the above value of the effective mass of holes, Hansen's expression for the band gap and momentum matrix element from magneto-optical measurements.

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Authors and Affiliations

  1. Institute of Physics, Charles University, Ke Karlovu 5, 121 16, Praha 2, Czechoslovakia

    P. Höschl, P. Moravec, R. Grill, J. Franc & E. Belas

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  1. P. Höschl
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  2. P. Moravec
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  3. R. Grill
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  4. J. Franc
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  5. E. Belas
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Höschl, P., Moravec, P., Grill, R. et al. Intrinsic carrier concentration in Hg1−xCdxTe. Czech J Phys 40, 48–56 (1990). https://doi.org/10.1007/BF01598354

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  • DOI: https://doi.org/10.1007/BF01598354

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