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The intensity-dependent dielectric function of an exciton system

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The nonlinear dielectric function of a direct band gap semiconductor is calculated using non-equilibrium Green's function technique. The interaction between the semiconductor and the intense radiation field is assumed to occur via excitons. As an example we calculate the polariton dispersion relation and the intensity-dependent changes of refraction index for GaAs.

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Authors and Affiliations

  1. Institute of Theoretical Physics, Acad. Sci. Vietnam, Nghia do, Tu liem, Hanoi, Vietnam

    Nguyen Nhu Dat

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  1. Nguyen Nhu Dat
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The author would like to thank Prof. Nguyen Van Hieu for projecting the problem and helpful discussions.

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Dat, N.N. The intensity-dependent dielectric function of an exciton system. Czech J Phys 39, 1048–1058 (1989). https://doi.org/10.1007/BF01597931

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  • DOI: https://doi.org/10.1007/BF01597931

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