Abstract
The HeNe laser stimulated etching of n-GaAs in aqueous solution of H2SO4/H2O2 mixture and alcali hydroxides was studied. The effects of laser power density as well as on the composition and concentration of etching solutions on photoetching was examined. In addition, a theoretical model of semiconductor etching in hydroxides is suggested.
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The authors thank Mr. F. Kozak for his help in the course of experiment.
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Švorčík, V., Rybka, V. & Myslík, V. Laser stimulated etching of n-GaAs. Czech J Phys 39, 1042–1047 (1989). https://doi.org/10.1007/BF01597930
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DOI: https://doi.org/10.1007/BF01597930