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On the theory of electroabsorption in amorphous semiconductors

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The coefficient of electroabsorption between localized states of an amorphous semiconductor in the weak electric field is evaluated. The decrease in the relative EA Δε 2/ε 2 F 2 with increasing energy deficitE g-ħΩ is found to be caused by the linear decrease in the density of thermally unstable localized states in the external electric field with the absolute value of the energy inside the gap. If we take into account exciton effects in the EA the qualitative picture does not change, only the slope and the position of the turnover of the relative change in the EA depends on the exciton binding energy.

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Authors and Affiliations

  1. Institute of Physics, EPRC, Slovak Acad. Sci., Dúbravská cesta, 899 30, Bratislava, Czechoslovakia

    E. Majerníková & V. Sládek

Authors
  1. E. Majerníková
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  2. V. Sládek
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Additional information

Dedicated to Professor Miroslav Trlifaj on the occasion of his sixtieth birthday.

The authors are indebted to T. F. Mazets (A. I. Ioffe PTI, Leningrad) for directing our attention to these problems and for useful discussions during the stay of one of us (E. M.) in the A. F. Ioffe Physico-Technical Institute. We thank also Ing. Š. Barta for useful discusions.

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Majerníková, E., Sládek, V. On the theory of electroabsorption in amorphous semiconductors. Czech J Phys 32, 81–92 (1982). https://doi.org/10.1007/BF01597549

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  • DOI: https://doi.org/10.1007/BF01597549

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