Abstract
The Anderson model is used to describe the role of electron correlation in localized states in amorphous semiconductors. We adopt a quasiparticle approach and discuss both the Fermi level pinning and the linear specific heat in terms of temperature and concentration changes of the one-particle density of states.
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References
Anderson P. W.: Phys. Rev. Lett.34 (1975) 953.
Čápek V.: Phys. Status Solidi (b)55 (1973 K 55.)
Okamoto H., Hamakawa Y.: Solid State Commun.24 (1977) 23.
Adler D., Yoffa E. J.: Phys. Rev. Lett.36 (1976) 1197.
Uda T., Yamada E.: J. Phys. Soc. Jap.46 (1979) 515.
Zeller R. C., Pohl R. O.: Phys. Rev. B4 (1971) 2029.
Zubarev D. N.: Usp. Fiz. Nauk71 (1960) 71.
Mašek J.: Thesis, Institute of Physics, Czechoslovak Academy of Sciences, Praha 1979.
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Dedicated to Professor Miroslav Trlifaj on the occasion of his sixtieth birthday.
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Mašek, J., Velický, B. Density of localized states and linear specific heat for anderson model of amorphous semiconductors. Czech J Phys 32, 69–75 (1982). https://doi.org/10.1007/BF01597547
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DOI: https://doi.org/10.1007/BF01597547