Abstract
The valence electron states of layered semiconductor GaS were studied by polarizedK X-ray emission bands. The polarized gallium and sulphurK bands were calculated and GaKβ2-bands were measured by the two crystal spectrometer. In the calculations the self-consistent pseudo-potential method was applied. Thep x ,p y p z -character and localisation of valence electron states were identified. Comparison with the results of controversial interpretation of photoemission and tight binding calculations were done and analysed in detail.
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We are indebted to J. Mikkelsen from Xerox Research Center in Palo Alto for kindly sending us the GaS single crystals.
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Drahokoupil, J., Šimůnek, A. Localization and symmetry of valence states in GaS. Czech J Phys 36, 702–708 (1986). https://doi.org/10.1007/BF01597408
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DOI: https://doi.org/10.1007/BF01597408