Abstract
This contribution analyzes the influence of the bias voltageU b and the total pressure of working gas mixturep TOT=p Ar+p N2 on the microstructure of grown TiN x films and the direction of growth of crystallites in the films with respect to the film-substrate interface.
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The authors would like to thank J. Švub for performing the scanning electron micrographs of TiN x films and J. Vyskočil for many useful discussions.
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Dudáš, J., Musil, J. Influence of substrate bias and pressure on microstructure of TiN x films reactively sputtered by cylindrical post magnetron. Czech J Phys 36, 697–701 (1986). https://doi.org/10.1007/BF01597407
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DOI: https://doi.org/10.1007/BF01597407