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Luminescence of Pr, Nd and Yb ions implanted in GaAs and GaP

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Czechoslovak Journal of Physics B Aims and scope

Abstract

New experimental data on luminescence spectra of Pr and Nd ions implanted into GaAs and GaP crystals and the results on luminescence kinetics of Nd doped GaP are presented. The results show that RE ions form different complexes in measured samples.

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Author notes

  1. V. N. Yakimkin

    Present address: Moscow State University, Leninskie gory, 117234, Moscow, USSR

Authors and Affiliations

  1. P. N. Lebedev Physical Institute, Acad. Sci. USSR, Leninsky prospekt 53, 117924, Moscow, USSR

    N. A. Rzakuliev, V. M. Konnov, V. N. Yakimkin, V. V. Ushakov & A. A. Gippius

  2. Institute of Physics, Czechosl. Acad. Sci., Na Slovance 2, 180 40, Prague 8, Czechoslovakia

    J. Oswald & J. Pastrňák

Authors
  1. N. A. Rzakuliev
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  2. V. M. Konnov
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  3. V. N. Yakimkin
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  4. V. V. Ushakov
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  5. A. A. Gippius
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  6. J. Oswald
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  7. J. Pastrňák
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Rzakuliev, N.A., Konnov, V.M., Yakimkin, V.N. et al. Luminescence of Pr, Nd and Yb ions implanted in GaAs and GaP. Czech J Phys 38, 1288–1293 (1988). https://doi.org/10.1007/BF01597299

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  • DOI: https://doi.org/10.1007/BF01597299

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