Abstract
Magnetoresistance of sputtered films of a-Ge has been studied. The experiments were performed in the temperature range 78–450 K and in magnetic fields up to 7 kG. The magnetoresistance has been found to be negative up to 450 K and changes its sign at 80 K. The experiments are confronted with a model based on the Zeeman splitting of localized electronic levels in the applied magnetic field. It is shown that such model can lead to relatively good agreement between the theory and the experiment.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Mell H., Stuke J., J. Non-Cryst. Sol.4 (1970), 304.
Koc S., Kubelík I., Rozsíval M., Štourač L., Tříska A., Vorlíček V., Závětová M., Zemek J., Proc. Int. Conf. Phys. and Chem. of Heteroj. and Layer Str., Budapest 1971, Vol.3, p. 163.
Ambegaokar V., Halperin B. I., Langer J. S., Phys. Rev.B 4 (1971), 2612.
Lukes T., Somaratna K. T. S., Tharmalingam K., J. Non-Cryst. Sol.4 (1970), 454.
Edwards S. F., J. Non-Cryst. Sol.4 (1970), 417.
Kubelík I., Tříska A., Czech. J. Phys.B 22 (1972), 506.
Kubelík I., Tříska A., Czech. J. Phys.A 22 (1972), 121.
Author information
Authors and Affiliations
Additional information
We are grateful to B.Velický for discussions about the subject matter of this paper and to J.Zemek for preparation of germanium samples.
Rights and permissions
About this article
Cite this article
Kubeli, I., Tříska, A. Magnetoresistance in amorphous germanium. Czech J Phys 23, 115–122 (1973). https://doi.org/10.1007/BF01596885
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01596885