Skip to main content
Log in

Preparation and electrical properties of copper-doped cadmium telluride single crystals

  • Published:
Czechoslovak Journal of Physics B Aims and scope

Abstract

Preparation and the electrical properties of copper-doped cadmium telluride single crystals prepared by directional freezing and by diffusion of copper from a layer of Cu2 Te are described in this paper. The dependence of electrical properties on the preparation mode is followed. In the enclosed infra-red spectra it is proved that samples suitable for optical measurements can be prepared by both described techniques.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. de Nobel D., Philips Res. Rept.14 (1959), 361.

    Google Scholar 

  2. Polívka P., Elektrotechnicky časopis24 (1973), No. 1.

  3. Libický A.,Halen V., Czechoslovak patent No. 126 819.

  4. Woodbury H. H., Aven M., J. Appl. Phys.39 (1968), 5485.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Popova, M., Polívka, P. Preparation and electrical properties of copper-doped cadmium telluride single crystals. Czech J Phys 23, 110–114 (1973). https://doi.org/10.1007/BF01596884

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01596884

Keywords

Navigation