Abstract
Preparation and the electrical properties of copper-doped cadmium telluride single crystals prepared by directional freezing and by diffusion of copper from a layer of Cu2 Te are described in this paper. The dependence of electrical properties on the preparation mode is followed. In the enclosed infra-red spectra it is proved that samples suitable for optical measurements can be prepared by both described techniques.
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References
de Nobel D., Philips Res. Rept.14 (1959), 361.
Polívka P., Elektrotechnicky časopis24 (1973), No. 1.
Libický A.,Halen V., Czechoslovak patent No. 126 819.
Woodbury H. H., Aven M., J. Appl. Phys.39 (1968), 5485.
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Popova, M., Polívka, P. Preparation and electrical properties of copper-doped cadmium telluride single crystals. Czech J Phys 23, 110–114 (1973). https://doi.org/10.1007/BF01596884
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DOI: https://doi.org/10.1007/BF01596884