Abstract
In this paper are studied the possibilities of investigating the structure of B+ -implanted Si single crystals by measuring X-ray rocking curves (the Bragg case). From the viewpoint of the dynamical diffraction of X-rays the structure of an implanted layer is described by a depth-profile of the statistical disorder of the layer structure and by a depth-profile of the relative change in the specific volume. These quantities take place in a modified form of the Takagi equations which are numerically computed for various values of the parameters of the layer, in order to trace their influence to the shape of the rocking curve. A great amount of free parameters and the complexity of their influence on the rocking curves make it impossible to fit the experimental and theoretical curves. On the basis of the theoretical study of the rocking curves the experimental curves measured on Si samples (dose 5×1015 cm−2 of B+, energy 50–200 keV) are interpreted qualitatively.
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Holý, V., Kuběna, J. X-ray rocking curves on inhomogeneous surface layers on Si single crystals. Czech J Phys 32, 750–766 (1982). https://doi.org/10.1007/BF01596828
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DOI: https://doi.org/10.1007/BF01596828