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ALNx thin films produced by d.c. reactive magnetron sputtering

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Czechoslovak Journal of Physics B Aims and scope

Conclusion

Aluminium nitride is the very promising thin film material for piezoelectric /2,3/ and microelectronic /4,5/ applications. The high microhardness of AlNX films, verified in our experiment, opens new possibilities of practical utilization of these films.

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References

  1. Aita C.R., Gawlak C.I.: J. Vac. Sci. Technol. A1 (1983) 403.

    Google Scholar 

  2. Shiosaki T. et al.: Appl.Phys.Lett. 36 (1980) 643.

    Google Scholar 

  3. Takedo F., Hata T.: Jap. J.Appl.Phys. 19 (1980) 1001.

    Google Scholar 

  4. Okamura S. et al.: Appl.Phys.Lett. 40 (1982) 689.

    Google Scholar 

  5. Bensalem R. et al.: Electron.Lett. 19 (1983) 112.

    Google Scholar 

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We wish to thank O.Pártl of the Department of Materials of the Faculty of Nuclear Science and Physical Engineering in Prague for help with microhardness measurements.

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Švub, J., Musil, J. ALNx thin films produced by d.c. reactive magnetron sputtering. Czech J Phys 35, 1191–1192 (1985). https://doi.org/10.1007/BF01596435

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  • DOI: https://doi.org/10.1007/BF01596435

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